Long-lived InGaAs quantum well lasers
- 8 May 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (19) , 1861-1862
- https://doi.org/10.1063/1.101260
Abstract
Pseudomorphic InGaAs lasers with cw operating lifetimes exceeding 5000 h are reported for the first time. The device structure, grown by low-pressure metalorganic chemical vapor deposition, incorporates a single In0.37Ga0.63As strained-layer quantum well in a GaAs/AlGaAs graded-index separate confinement heterostructure. These devices are remarkable for their immunity to sudden failure and for their (gradual) degradation rates which are comparable to the best GaAs lasers.Keywords
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