Continuous room-temperature operation of an InGaAs-GaAs-AlGaAs strained-layer laser
- 27 July 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (4) , 215-217
- https://doi.org/10.1063/1.98479
Abstract
We report the first continuous wave room-temperature InGaAs-GaAs-AlGaAs strained-layer semiconductor laser diode grown by molecular beam epitaxy. The laser is a multiple quantum well transverse junction stripe laser with a lateral heterojunction fabricated by zinc diffusion enhanced compositional disordering. The low-threshold (20 mA) and single-mode performance of the laser demonstrates that a high-quality lateral p+-p-n junction and lateral heterobarrier can be formed by zinc diffusion compositional disordering of a strained-layer InGaAs-GaAs-AlGaAs quantum well heterostructure.Keywords
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