GaAsP-GaInAsSb superlattices: A new structure for electronic devices
- 1 September 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 68 (1) , 477-482
- https://doi.org/10.1016/0022-0248(84)90453-6
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- Epitaxial Growth and Characterization of Pyrolytic-Grown GaAs[sub 1−x]P[sub x] for Electroluminescent DiodesJournal of the Electrochemical Society, 1973