Semimetallic InAs-GaSb superlattices to the heterojunction limit
- 1 January 1981
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (1) , 30-32
- https://doi.org/10.1063/1.92115
Abstract
Superlattices of InAs-GaSb have been investigated with layer thicknesses ranging from the onset of the semiconductor-semimetal transition (<100 Å) to the heterojunction limit (≳1000 Å). Pronounced Shubnikov–de Haas osicillations have been observed throughout the entire semimetallic regime which are shown to be associated with the ground-electron sub-bands, yielding energies of the Fermi level in agreement with those calculated from electron transfers.Keywords
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