Interband Magnetoabsorption in InAs and InSb
- 15 February 1967
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 154 (3) , 737-742
- https://doi.org/10.1103/physrev.154.737
Abstract
Direct interband magneto-optical transitions have been observed in bulk and epitaxial films of InAs with magnetic fields up to 100 kOe. The results are interpreted using a modification of the method of Luttinger and Kohn which includes the effects of nonparabolic conduction and light-hole bands, and warping of the conduction and valence bands. The following band parameters at k=0 are obtained for K: conduction-band effective mass ; light-hole effective mass ; and conduction-band factor . Further experimental results (obtained from magnetoabsorption data) are given for the energy dependence of the conduction-band factors in InSb and InAs. These are compared with the results computed theoretically.
Keywords
This publication has 19 references indexed in Scilit:
- Interband Magneto-Absorption and Faraday Rotation in InSbPhysical Review B, 1966
- Energy Levels of Conduction Electrons in a Magnetic FieldPhysical Review B, 1959
- Magnetic Susceptibility of InSbPhysical Review B, 1959
- Theory of Optical Magneto-Absorption Effects in SemiconductorsPhysical Review B, 1959
- Zeeman-Type Magneto-Optical Studies of Interband Transitions in SemiconductorsPhysical Review B, 1959
- Theory of the Effect of a Magnetic Field on the Absorption Edge in SemiconductorsProceedings of the Physical Society, 1958
- Oscillatory Magneto-Absorption in SemiconductorsPhysical Review B, 1957
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957
- Quantum Theory of Cyclotron Resonance in Semiconductors: General TheoryPhysical Review B, 1956
- Motion of Electrons and Holes in Perturbed Periodic FieldsPhysical Review B, 1955