Observation of semiconductor-semimetal transition in InAs-GaSb superlattices
- 15 December 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (12) , 939-942
- https://doi.org/10.1063/1.91013
Abstract
The semiconductor‐semimetal transition in InAs‐GaSb superlattices is observed at a layer thickness in the vicinity of 100 Å. The transition manifests itself in an increase in the measured carrier concentration as a result of electron transfer from GaSb to InAs when ground subbands of electrons and heavy holes cross each other. Shubnikov‐de Haas measurements confirm the carrier enhancement in the semimetallic state.Keywords
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