Strained-layer InGaAs-GaAs-AlGaAs graded-index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy

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Abstract
Strained-layer Ga0.7In0.3As-AlGaAs-GaAs graded-index separate confinement heterostructure single quantum well lasers have been grown by molecular beam epitaxy with growth conditions selected to optimize the growth of each material. The lasers emit at a wavelength of 1.03 μm at 300 K. These lasers have threshold currents of 12 mA for 3 μm×400 μm devices and average threshold current densities of 174 A/cm2 for 40 μm×800 μm devices. Studies of threshold current versus cavity length and width are compared with theoretical formulations. The threshold currents for lasers of various lengths and widths are significantly lower than those for previous strained-layer lasers grown by molecular beam epitaxy and lower than those for strained-layer lasers grown by organometallic vapor phase epitaxy.