Current-Driven Magnetization Reversal in a Ferromagnetic Semiconductor $(\mathrm{G}\mathrm{a},\mathrm{M}\mathrm{n})\mathrm{A}\mathrm{s}/\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}/(\mathrm{G}\mathrm{a},\mathrm{M}\mathrm{n})\mathrm{A}\mathrm{s}$ Tunnel Junction

Current-driven magnetization reversal in a ferromagnetic semiconductor based $(\mathrm{G}\mathrm{a},\mathrm{M}\mathrm{n})\mathrm{A}\mathrm{s}/\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}/(\mathrm{G}\mathrm{a},\mathrm{M}\mathrm{n})\mathrm{A}\mathrm{s}$ magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular $1.5\times 0.3{\mu \mathrm{m}}^2$ device revealed that magnetization switching occurs at low critical current densities of $1.1–2.2\times {10}^5\mathrm{A}/{\mathrm{c}\mathrm{m}}^2$ despite the presence of spin-orbit interaction in the $p$-type semiconductor system. Possible mechanisms responsible for the effect are discussed.