Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction

Preprint
Publisher Website
Google Scholar
  • 19 March 2004
Abstract
Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular 1.5x0.3 um^2 device revealed that magnetization switching occurs at critical current densities of 1.1 - 2.2x10^5 A/cm^2. Possible mechanisms responsible for the effect are discussed.

This publication has 0 references indexed in Scilit: