Growth of GaNAlN and AlGaN by MOCVD using triethylgallium and tritertiarybutylaluminium
- 1 January 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 170 (1-4) , 335-339
- https://doi.org/10.1016/s0022-0248(96)00623-9
Abstract
No abstract availableKeywords
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