Carrier capture processes in semiconductor superlattices due to emission of confined phonons
- 15 June 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (12) , 6306-6312
- https://doi.org/10.1063/1.359099
Abstract
No abstract availableThis publication has 46 references indexed in Scilit:
- Capture time versus barrier thickness in quantum-well structures measured by infrared photoconductive gainApplied Physics Letters, 1993
- Electron–confined-phonon interaction in quantum wells: Reformulation of the slab modelPhysical Review B, 1992
- The effect of electric field on intrasubband and intersubband transitions via interface phonons in GaAs-AlAs quantum wellsJournal of Physics: Condensed Matter, 1992
- Electron–confined-optical-phonon scattering rates in single quantum wells in an applied electric fieldPhysical Review B, 1992
- Carrier capture times in 1.5 μm multiple quantum well optical amplifiersApplied Physics Letters, 1992
- Intrasubband transitions and well capture via confined, guided and interface L0 phonons in superlatticesSuperlattices and Microstructures, 1989
- Hot carrier energy loss rates in GaInAs/InP quantum wellsSolid-State Electronics, 1988
- Theory of well-width-dependent periodic variation in photoluminescence from As/GaAs quantum wellsPhysical Review B, 1986
- Calculation of carrier capture time of a quantum well in graded-index separate-confinement heterostructuresPhysical Review B, 1986
- The dynamics of electron-hole collection in quantum well heterostructuresJournal of Applied Physics, 1982