Calculation of carrier capture time of a quantum well in graded-index separate-confinement heterostructures
- 15 August 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 34 (4) , 2381-2384
- https://doi.org/10.1103/physrevb.34.2381
Abstract
The electron capture time into the quantum well of a graded-index separate-confinement heterostructure laser has been calculated at 77 and 300 K. The results (at 77 K) show oscillations between several picoseconds and several tens of picoseconds with increasing quantum-well thickness, qualitatively similar to the behavior in simple separate-confinement structures. Quantitatively, the difference in capture times for optimal structures of each kind does not explain the lower threshold of the graded-index structure.Keywords
This publication has 10 references indexed in Scilit:
- Resonant carrier capture by semiconductor quantum wellsPhysical Review B, 1986
- Very low threshold current ridge-waveguide AlGaAs/GaAs single-quantum-well lasersElectronics Letters, 1985
- Transient Characteristics of Photoluminescence from GaAs/Ga0.7Al0.3As Single Quantum Well StructureJapanese Journal of Applied Physics, 1985
- Heterostructure semiconductor lasers prepared by molecular beam epitaxyIEEE Journal of Quantum Electronics, 1984
- Some characteristics of the GaAs/GaAlAs graded-index separate-confinement heterostructure quantum well laser structureApplied Physics Letters, 1984
- Localization induced electron-hole transition rate enhancement in GaAs quantum wellsApplied Physics Letters, 1984
- Recombination Enhancement due to Carrier Localization in Quantum Well StructuresPhysical Review Letters, 1983
- The dynamics of electron-hole collection in quantum well heterostructuresJournal of Applied Physics, 1982
- Two-dimensional electron transport in semiconductor layers. I. Phonon scatteringAnnals of Physics, 1981
- Carrier collection in a semiconductor quantum wellSolid State Communications, 1978