Optical properties of InxGa1−xN alloys grown by metalorganic chemical vapor deposition

This publication has 36 references indexed in Scilit:

• Properties of InGaN quantum-well heterostructures grown on sapphire by metalorganic chemical vapor deposition
  Applied Physics Letters, 1997
• Compositional inhomogeneity and immiscibility of a GaInN ternary alloy
  Applied Physics Letters, 1997
• Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
  Applied Physics Letters, 1997
• Recombination dynamics of localized excitons in ${\mathrm{In}}_{0.20}$${\mathrm{Ga}}_{0.80}$N-${\mathrm{In}}_{0.05}$${\mathrm{Ga}}_{0.95}$N multiple quantum wells
  Physical Review B, 1997
• InGaN/AlGaN blue-light-emitting diodes
  Journal of Vacuum Science & Technology A, 1995
• Temperature dependence of interband transitions in GaN grown by metalorganic chemical vapor deposition
  Applied Physics Letters, 1995
• Optical and structural properties of III-V nitrides under pressure
  Physical Review B, 1994
• Temperature dependence of photoreflectance line shapes in GaAsAlGaAs multiple quantum wells
  Superlattices and Microstructures, 1987
• Photoluminescence line shape of excitons in alloy semiconductors
  Physical Review B, 1986
• Free and bound excitons and the effect of alloy disorder in MBE grown Al_xGa_1-xAs
  Journal of Physics C: Solid State Physics, 1985