Bipolar transistor: Two-dimensional effects on current gain and base transit time
- 1 December 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (12) , 1715-1724
- https://doi.org/10.1016/0038-1101(88)90069-x
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- On the sidewall effects in submicrometer bipolar transistorsIEEE Transactions on Electron Devices, 1987
- Interstitial interactions: Aluminum-boron, aluminum-gallium, and boron-gallium pull effectJournal of Applied Physics, 1987
- Defects and leakage currents in BF2-implanted preamorphized siliconJournal of Applied Physics, 1986