A closely spaced (50 μm) array of 16 individually addressable buried heterostructure GaAs lasers
- 1 July 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (1) , 9-11
- https://doi.org/10.1063/1.93304
Abstract
An array of 16 individual addressable lasers with 50-μm center spacing has been monolithically integrated on a GaAs chip and cw bonded to a Si submount and copper heat sink. The lasers have the loss stabilized buried heterostructure geometry with separate optical and carrier confinement. The advantages of this laser geometry for integration into arrays are described.Keywords
This publication has 8 references indexed in Scilit:
- Single mode operation of buried heterostructure lasers by loss stabilizationIEEE Journal of Quantum Electronics, 1981
- The high-temperature (55–70 °C) device characteristics of cw (AlGa)As double-heterostructure proton-bombarded stripe lasers grown by molecular beam epitaxyApplied Physics Letters, 1981
- MP-B5 GaAlAs visible laser arraysIEEE Transactions on Electron Devices, 1980
- Integrated output power detection for AlGaAs laser arrayIEEE Journal of Quantum Electronics, 1980
- Buried-heterostructure AlGaAs lasersIEEE Journal of Quantum Electronics, 1980
- A densely packed monolithic linear array of GaAs-AlxGa1−xAs strip buried heterostructure laserApplied Physics Letters, 1979
- Fabrication Processes for a Silicon Substrate Package or Integrated Gallium Arsenide Laser ArraysJournal of the Electrochemical Society, 1978
- Gallium arsenide laser-array-on-silicon packageApplied Optics, 1978