Photocarrier thermalization and polariton kinetics in GaAs by laser excitation spectroscopy
- 1 June 1977
- journal article
- research article
- Published by Springer Nature in Il Nuovo Cimento B (1971-1996)
- Vol. 39 (2) , 660-665
- https://doi.org/10.1007/bf02725808
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Pump wavelength dependence of hot electron temperature in GaAsSolid State Communications, 1976
- CW dye laser emission in the range 7540–8880 ÅOptics Communications, 1976
- Kinetics of excitons and polaritons in pure GaAs studied by optical spin orientationJournal of Luminescence, 1976
- Energy Relaxation of Photoexcited Hot Electrons in GaAsPhysical Review B, 1973
- Binding probability of free electrons and free holes into Wannier-Mott exciton in non-polar semiconductorsJournal of Physics and Chemistry of Solids, 1973
- Polariton Reflectance and Photoluminescence in High-Purity GaAsPhysical Review B, 1973
- Intrinsic Oscillatory Photoconductivity and the Band Structure of GaAsPhysical Review B, 1971
- Oscillatory Photoconductivity of Epitaxial GaAsPhysical Review B, 1969
- Oscillatory Intrinsic Photoconductivity of GaSb and InSbPhysical Review Letters, 1964
- Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction bandJournal of Physics and Chemistry of Solids, 1960