Elimination of dislocations in heteroepitaxial MBE and RTCVD Ge x Si1-x grown on patterned Si substrates
- 1 September 1990
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 19 (9) , 949-955
- https://doi.org/10.1007/bf02652921
Abstract
No abstract availableKeywords
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