Validity of quasi-static capacitance-voltage measurements applied to hydrogenated amorphous silicon diodes
- 1 July 1986
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 40 (3) , 171-176
- https://doi.org/10.1007/bf00617400
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Gap states in phosphorus-doped amorphous silicon studied by isothermal capacitance transient spectroscopyPhilosophical Magazine Part B, 1985
- Raman Scattering Studies on Hydrogenated Amorphous Silicon Prepared under High Deposition Rate ConditionsJapanese Journal of Applied Physics, 1985
- Theoretical Interpretation of Capacitance-Voltage Characteristics of Metal-a-Si:H Schottky BarriersJapanese Journal of Applied Physics, 1983
- Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopyPhysical Review B, 1982
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- A quasi-static technique for MOS C-V and surface state measurementsSolid-State Electronics, 1970