Native defects and complexes in SiC
- 20 September 2001
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 13 (40) , 9027-9037
- https://doi.org/10.1088/0953-8984/13/40/319
Abstract
Prototypical native defects, in particular monovacancies, are studied using ab initio density functional theory and the local spin-density approximation. Several properties such as the energetics, geometry, electronic structure, and spin states are discussed regarding their dependence on the chemical nature, the preparation conditions, and the polytype of the SiC crystal. Consequences of the defects are derived for the doping behaviour, electrical properties, and photoluminescence spectra.Keywords
This publication has 49 references indexed in Scilit:
- Vacancies in SiC: Influence of Jahn-Teller distortions, spin effects, and crystal structurePhysical Review B, 1999
- Properties of thebound exciton inPhysical Review B, 1999
- Antisites in silicon carbidePhysical Review B, 1998
- Heterocrystalline Structures: New Types of Superlattices?Physical Review Letters, 1995
- Some new features of the photoluminescence of SiC(6H), SiC(4H), and SiC(15R)Journal of Applied Physics, 1994
- Point defects in silicon carbidePhysica B: Condensed Matter, 1993
- Electron spin resonance in electron-irradiated 3C-SiCJournal of Applied Physics, 1989
- Formation energies, abundances, and the electronic structure of native defects in cubic SiCPhysical Review B, 1988
- Polytypic transformations in silicon carbideProgress in Crystal Growth and Characterization, 1983
- Optical Properties of Cubic SiC: Luminescence of Nitrogen-Exciton Complexes, and Interband AbsorptionPhysical Review B, 1964