Ion backscattering and channeling study of InAs-GaSb superlattices
- 15 November 1980
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (10) , 931-933
- https://doi.org/10.1063/1.91764
Abstract
We show that the Rutherford backscattering yield from [100] InAs-GaSb superlattices has a marked oscillatory structure indicative of the superlattice periodicity. Channeling measurements reveal higher dechanneling along 〈110〉 than along [100] directions, and this can be interpreted as an evidence for relaxation effects along the [100] growth direction at each InAs-GaSb interface. We attribute this to the fact that, although there is a good lattice match between InAs and GaSb, the interfaces consist of either Ga–As or In–Sb bonds, which differ by 7% in binding distance from InAs-GaSb.Keywords
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