Morphology of porous silicon studied by STM/SEM
- 1 May 1990
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 44 (3) , 185-192
- https://doi.org/10.1016/0169-4332(90)90049-6
Abstract
No abstract availableFunding Information
- Comisión Interministerial de Ciencia y Tecnología (PB86-0606)
This publication has 13 references indexed in Scilit:
- Combination of a scanning tunneling microscope with a scanning electron microscopeReview of Scientific Instruments, 1988
- Porous silicon techniques for SOI structuresIEEE Circuits and Devices Magazine, 1987
- Porosity and Pore Size Distributions of Porous Silicon LayersJournal of the Electrochemical Society, 1987
- An experimental and theoretical study of the formation and microstructure of porous siliconJournal of Crystal Growth, 1985
- Kinetics and mechanism of porous layer growth during n-type silicon anodization in HF solutionSurface Technology, 1983
- Tunneling through a controllable vacuum gapApplied Physics Letters, 1982
- Formation Mechanism of Porous Silicon Layer by Anodization in HF SolutionJournal of the Electrochemical Society, 1980
- Formation and Properties of Porous Silicon FilmJournal of the Electrochemical Society, 1977
- Electropolishing Silicon in Hydrofluoric Acid SolutionsJournal of the Electrochemical Society, 1958
- Electrolytic Shaping of Germanium and SiliconBell System Technical Journal, 1956