Microwave performance of InGaAs/InP composite collector bipolar transistors
- 2 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A composite collector heterostructure InGaAs/InP bipolar transistor (CCHBT) is described. The collector design assures both the high breakdown voltage, BV/sub CEO/, and the high speed needed for practical IC applications. The microwave performance of the CCHBT is presented. The authors have fabricated and tested monolithic transimpedance amplifiers based on these composite collector transistors. A bandwidth of 28 GHz and a gain of 40 dB Omega were obtained.Keywords
This publication has 4 references indexed in Scilit:
- Bistable hot electron transport in InP/GaInAs composite collector heterojunction bipolar transistorsApplied Physics Letters, 1992
- Anomalous electric field and temperature dependence of collector multiplication in InP/Ga0.47In0.53As heterojunction bipolar transistorsApplied Physics Letters, 1992
- InGaAs/InP composite collector heterostructure bipolar transistorsElectronics Letters, 1992
- Subpicosecond InP/InGaAs heterostructure bipolar transistorsIEEE Electron Device Letters, 1989