Anomalous electric field and temperature dependence of collector multiplication in InP/Ga0.47In0.53As heterojunction bipolar transistors
- 22 June 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (25) , 3150-3152
- https://doi.org/10.1063/1.106751
Abstract
The collector multiplication in InP/Ga0.47In0.53As heterojunction bipolar transistors was found to increase with temperature, and to have a weak electric field dependence. This anomalous behavior has a profound impact on device characteristics.Keywords
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