Very high tin doping of Ga0.47In0.53As by molecular beam epitaxy
- 19 March 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (12) , 1137-1139
- https://doi.org/10.1063/1.102542
Abstract
The incorporation of Sn into Ga0.47In0.53As grown at 450 °C by hydride source molecular beam epitaxy at concentrations ranging from about 3×1018 to 1×1021 Sn/cm3 has been investigated. Sn is a well behaved donor to about n=1020 cm−3, although increasing compensation is noted with increasing doping. At total concentrations beyond about 1020 cm−3 added Sn is not electrically active although the epitaxial quality remains high without noticeable morphology changes, defects, or precipitates, to at least 1021 Sn/cm3 .Keywords
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