Impact ionisation coefficients in In0.53Ga0.47As
- 1 July 1990
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 5 (7) , 789-791
- https://doi.org/10.1088/0268-1242/5/7/026
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Impact ionization rates in an InGaAs/InAlAs superlatticeApplied Physics Letters, 1989
- Electron and hole impact ionization rates in InP/Ga0.47In0.53As superlatticeIEEE Journal of Quantum Electronics, 1986
- Impact ionization coefficients of electrons and holes inIEEE Journal of Quantum Electronics, 1985
- Impact ionization in (100), (110), and (111) oriented InP avalanche photodiodesApplied Physics Letters, 1983
- Electron and hole impact ionization coefficients in InP determined by photomultiplication measurementsApplied Physics Letters, 1982
- Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratioApplied Physics Letters, 1982
- Impact ionisation in multilayered heterojunction structuresElectronics Letters, 1980
- Impact ionization rates for electrons and holes in Ga0.47In0.53AsApplied Physics Letters, 1980
- Ionization Rates of Holes and Electrons in SiliconPhysical Review B, 1964