Doping superlattices in GaP

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Abstract
Atmospheric pressure organometallic vapor‐phase epitaxy was used to grow GaP doping superlattices. Measurements are reported for the first doping superlattice with a band gap which is indirect in both real space and k space. The first observations of phonon replicas in a n‐i‐p‐i photoluminescence (PL) spectrum and a n‐i‐p‐i‐like PL peak coming from donor–acceptor transitions are also reported. Large energy shifts of 60 meV per decade of excitation intensity have been observed. The n‐i‐p‐i peak intensities increased linearly with excitation intensity, and the bound exciton peak intensities increased superlinearly, at low illumination intensity, as expected for a periodically modulated space‐charge potential. The distribution coefficients for Te and Zn in GaP were found, at 630 °C, to be 34 and 3.0×10−3, respectively.