Post-implantation annealing of SiC studied by slow-positron spectroscopies
- 9 February 1998
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 10 (5) , 1147-1156
- https://doi.org/10.1088/0953-8984/10/5/022
Abstract
The effects of post-implantation annealing of damage in 6H-SiC caused by ion implantation at two different fluences have been studied by monoenergetic positron Doppler broadening and lifetime techniques. The measurements are supported by new calculations of positron lifetimes in vacancy clusters in SiC. At both fluences two defected layers are identified and characterized by depth and defect type as a function of annealing temperature. The results indicate that it is impossible to remove the radiation damage by annealing at temperatures up to .Keywords
This publication has 19 references indexed in Scilit:
- Defects in Ion-Implanted 3C–SiC Probed by a Monoenergetic Positron BeamJapanese Journal of Applied Physics, 1996
- Positron studies of defects in ion-implanted SiCPhysical Review B, 1996
- Positron annihilation in diamond, silicon and silicon carbideApplied Physics A, 1995
- An investigation of point defects in silicon carbideApplied Physics A, 1995
- Irradiation-induced atomic defects in SiC studied by positron annihilationApplied Physics A, 1995
- A computer-controlled system for slow positron implantation spectroscopyMeasurement Science and Technology, 1995
- Defects in Semiconductors: Recent Progress in Positron ExperimentsMaterials Science Forum, 1994
- Defects in electron-irradiated 3C-SiC epilayers observed by positron annihilationHyperfine Interactions, 1993
- High-Temperature Equilibrium Vacancy Formation in Ceramic Materials Studied by Positron AnnihilationMaterials Science Forum, 1992
- Interaction of positron beams with surfaces, thin films, and interfacesReviews of Modern Physics, 1988