Convective and Absolute Instabilities in Semiconductors Exhibiting Negative Differential Mobility
- 2 August 1971
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 27 (5) , 256-259
- https://doi.org/10.1103/physrevlett.27.256
Abstract
It is shown that, in a semiconductor exhibiting negative differential mobility, the coupling between diffusion effects and the tendency for space-charge accumulation can lead to temporal growth rather than spatial amplification if the dielectric relaxation frequency exceeds a certain threshold value. This conclusion results from an analysis of the dispersion relation for longitudinal waves in the semiconductor. The criterion for temporal growth is a condition for absolute instability, as opposed to convective instability, which would indicate rather spatial amplification.Keywords
This publication has 4 references indexed in Scilit:
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