Recrystallization Mechanism for Solid Phase Growth of Poly-Si Films on Quartz Substrates
- 1 December 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (12A) , L2408
- https://doi.org/10.1143/jjap.27.l2408
Abstract
The recrystallization mechanism for solid-phase growth of poly-Si films amorphized by ion implantation on quartz substrates is clarified on the basis of an experimental finding obtained through the TEM observation. It is found that the {110} textured nucleation occurs. The preferential growth in the directions along twin boundaries then leads to the formation of the dendritic structure.Keywords
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