Temperature effects on Ge condensation by thermal oxidation of SiGe-on-insulator structures
- 15 April 2004
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 95 (8) , 4007-4011
- https://doi.org/10.1063/1.1649812
Abstract
The Ge depth profile and generation of dislocations associated with oxidation of SiGe-on-insulator (SGOI) substrates are examined from the viewpoint of the temperature dependence. It is found that Ge profiles in SGOI layers after oxidation are strongly dependent on the oxidation temperature. This fact is explained by the competitive process between the accumulation of Ge atoms at the SiGe/thermal oxide interface, determined by the oxidation rate, and Ge diffusion toward substrates during oxidation of SGOI substrates. While the abrupt Ge profile obtained by low-temperature oxidation causes the generation of dislocations, SGOI layers with high Ge content and no dislocations can be achieved by high-temperature oxidation.This publication has 8 references indexed in Scilit:
- A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETsJapanese Journal of Applied Physics, 2001
- Formation of SiGe on Insulator Structure and Approach to Obtain Highly Strained Si Layer for MOSFETsJapanese Journal of Applied Physics, 2001
- Formation of strained-silicon layer on thin relaxed-SiGe/SiO 2 /Si structure using SIMOX technologyThin Solid Films, 2000
- Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technologyIEEE Electron Device Letters, 2000
- Measurements of alloy composition and strain in thin GexSi1−x layersJournal of Applied Physics, 1994
- The Ge−Si (Germanium-Silicon) systemBulletin of Alloy Phase Diagrams, 1984
- The Diffusion Coefficient of Germanium in SiliconPhysica Status Solidi (a), 1982
- Permeation of Gaseous Oxygen through Vitreous SilicaNature, 1961