GeMoW refractory ohmic contacts to n -type GaAs with In 0.5 Ga 0.5 As cap layer
- 4 March 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (5) , 480-481
- https://doi.org/10.1049/el:19930321
Abstract
GeMoW is presented as a refractory ohmic contact to n-type GaAs with an In0.5Ga0.5As cap layer. The contact exhibits ohmic behaviour over a wide annealing temperature range from 300 to 700°C. A minimum contact resistance of 0.176 Ω mm was obtained following furnace annealing at 500°C.Keywords
This publication has 1 reference indexed in Scilit:
- Reliability of Ohmic Contacts for AlGaAs/GaAs HBTsMRS Proceedings, 1990