Epitaxial growth of cadmium sulphide on (111) germanium substrates
- 1 December 1975
- journal article
- research article
- Published by Springer Nature in Journal of Materials Science
- Vol. 10 (12) , 2117-2123
- https://doi.org/10.1007/bf00557490
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Current-voltage characteristics of p-Ge/n-CdS heterojunction diodesApplied Physics Letters, 1973
- Epitaxial growth and structure of ZnTe evaporated on to Ge in vacuumJournal of Materials Science, 1972
- Crystallographic defects in epitaxial layers of cadmium sulphideJournal of Crystal Growth, 1971
- Photovoltage properties of CdSe–Ge isotype heterojunctionsPhysica Status Solidi (a), 1970
- The epitaxy of zinc sulphide on siliconJournal of Materials Science, 1970
- Electrical and Photovoltaic Properties of CdS-Si JunctionsJapanese Journal of Applied Physics, 1970
- Anomalous Breakdown in CdS(CdSe)-n·Ge JunctionsJapanese Journal of Applied Physics, 1968
- The Growth and Electrical Characteristics of Epitaxial Layers of Zinc Selenide on p‐Type GermaniumPhysica Status Solidi (b), 1968
- Photovoltaic Properties of CdS-p·Si Heterojunction CellsJapanese Journal of Applied Physics, 1967
- The heterojunction transistor and the space-charge-limited triodeBritish Journal of Applied Physics, 1965