Effect of Line Width on Electromigration of Textured Pure Aluminum Films
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Effects of microstructure on interconnect and via reliability: Multimodal failure statisticsJournal of Electronic Materials, 1993
- Relationship between texture and electromigration lifetime in sputtered AI-1% Si thin filmsJournal of Electronic Materials, 1993
- Electromigraton activation energy dependence on AlCu interconnect linewidth and microstructureApplied Physics Letters, 1992
- Correlation of texture with electromigration behavior in Al metallizationApplied Physics Letters, 1991
- Characterization of the early stages of electromigration at grain boundary triple junctionsApplied Physics Letters, 1991
- Morphology of electromigration-induced damage and failure in Al alloy thin film conductorsJournal of Electronic Materials, 1990
- Electromigration-induced failures in interconnects with bimodal grain size distributionsJournal of Electronic Materials, 1990
- Grain size dependence of electromigration-induced failures in narrow interconnectsApplied Physics Letters, 1989
- A high ionization efficiency source for partially ionized beam depositionJournal of Vacuum Science & Technology A, 1988
- Linewidth dependence of electromigration in evaporated Al-0.5%CuApplied Physics Letters, 1980