Photoluminescence microscopy of InGaN quantum wells
- 17 March 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (11) , 1333-1335
- https://doi.org/10.1063/1.118600
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Growth and properties of InxGa1−xN/AlyGa1−yN multiquantum wells developed by molecular beam epitaxyApplied Physics Letters, 1996
- Characteristics of InGaN multi-quantum-well-structure laser diodesApplied Physics Letters, 1996
- Growth and characterization of bulk InGaN films and quantum wellsApplied Physics Letters, 1996
- InGaN multi-quantum-well structure laser diodes grown on MgAl2O4 substratesApplied Physics Letters, 1996
- Identification of optical transitions in cubic and hexagonal GaN by spatially resolved cathodoluminescencePhysical Review B, 1996
- Spatial distribution of the luminescence in GaN thin filmsApplied Physics Letters, 1996
- InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN filmsJournal of Applied Physics, 1993