n and p substitutional doping of r.f.-sputtered a-SiC:H
- 1 May 1985
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 127 (3-4) , 337-350
- https://doi.org/10.1016/0040-6090(85)90203-2
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Amorphous silicon-carbon-fluorine alloy filmsPhysical Review B, 1983
- Optical and Electrical Properties of Hydrogenated Amorphous Silicon CarbidePhysica Status Solidi (b), 1982
- Doping, Schottky barrier and pn junction formation in amorphous germanium and silicon by rf sputteringSolid State Communications, 1976
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976
- Optical and electrical properties of boron-implanted amorphous germanium thin filmsJournal of Applied Physics, 1974
- Amorphous bismuth‐germanium thin films. I. Structural and electrical propertiesJournal of Applied Physics, 1974
- Electron paramagnetic resonance and the ageing process in amorphous germaniumThin Solid Films, 1971
- Preparation and Properties of Noncrystalline Silicon Carbide FilmsJournal of Applied Physics, 1968
- Amorphous germanium and silicon: Structure and transport phenomenaMaterials Research Bulletin, 1968
- Optical properties and electronic structure of amorphous Ge and SiMaterials Research Bulletin, 1968