Relaxation of radiation damage in silicon planar detectors
- 1 October 1994
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (7) , 4072-4076
- https://doi.org/10.1063/1.357356
Abstract
The behavior of radiation‐induced carbon‐related defects in high‐resistivity silicon detectors has been investigated. The defects were introduced by α‐particle irradiation and investigated by deep‐level transient spectroscopy. An unusual defect behavior consists in low‐temperature annealing, including self‐annealing at room temperature, of the interstitial carbon Ci with a simultaneous increase of the Ci‐Oi‐complex concentration. The kinetic parameters of the process have been determined from the increase of the Ci‐center concentration versus time. Two annealing velocities have been observed, which arise from different heat treatments during the detector fabrication process.This publication has 12 references indexed in Scilit:
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