Chemistry and structure of GaAs surfaces cleaned by sulfur annealing
- 1 November 1992
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 220 (1-2) , 212-216
- https://doi.org/10.1016/0040-6090(92)90574-u
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Synchrotron radiation photoemission analysis for (NH4)2Sx-treated GaAsJournal of Applied Physics, 1991
- Universal Passivation Effect of (NH4)2Sx Treatment on the Surface of III-V Compound SemiconductorsJapanese Journal of Applied Physics, 1991
- Bonding states of chemisorbed sulfur atoms on GaAsSurface Science, 1991
- First-principles study of sulfur passivation of GaAs(001) surfacesPhysical Review B, 1990
- Surface core level shifts on CdS(101̄0)Surface Science, 1990
- Solid surface analysis beamline BL-1A at the Photon FactoryReview of Scientific Instruments, 1989
- Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivationApplied Physics Letters, 1987
- Electrical properties of ideal metal contacts to GaAs: Schottky-barrier heightJournal of Vacuum Science & Technology B, 1984
- Schottky-barrier height of ideal metal contacts to GaAsApplied Physics Letters, 1984
- Surface States and Barrier Height of Metal-Semiconductor SystemsJournal of Applied Physics, 1965