Thermoelastic analysis of GaAs in LEC growth configuration
- 1 January 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 80 (1) , 37-50
- https://doi.org/10.1016/0022-0248(87)90521-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- The theory and practice of dislocation reduction in GaAs and InPJournal of Crystal Growth, 1984
- LEC growth and characterization of undoped InP crystalsJournal of Crystal Growth, 1981
- An evaluation of the thermal and elastic constants affecting GaAs crystal growthJournal of Crystal Growth, 1980
- A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs CrystalsBell System Technical Journal, 1980
- Impurity effect on grown-in dislocation density of InP and GaAs crystalsJournal of Applied Physics, 1978
- Growth peculiarities of gallium arsenide single crystalsSolid-State Electronics, 1963