Study of a buried sin+P homojunction solar cell
- 28 February 1987
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 30 (2) , 155-159
- https://doi.org/10.1016/0038-1101(87)90142-0
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Sputtered oxide/indium phosphide junctions and indium phosphide surfacesJournal of Applied Physics, 1980
- Spray-deposited ITO—Silicon SIS heterojunction solar cellsIEEE Transactions on Electron Devices, 1980
- Optimization of oxide-semiconductor/base-semiconductor solar cellsIEEE Transactions on Electron Devices, 1980
- MIS and SIS solar cellsIEEE Transactions on Electron Devices, 1980
- Solar-cell characteristics and interfacial chemistry of indium-tin-oxide/indium phosphide and indium-tin-oxide/gallium arsenide junctionsJournal of Applied Physics, 1979
- n-indium tin oxide/p-indium phosphide solar cellsApplied Physics Letters, 1977
- Open-circuit voltage of MIS silicon solar cellsJournal of Applied Physics, 1976
- Control of Schottky barrier height using highly doped surface layersSolid-State Electronics, 1976
- Effects of interfacial oxide layers on the performance of silicon Schottky-barrier solar cellsApplied Physics Letters, 1976
- A 15% efficient antireflection-coated metal-oxide-semiconductor solar cellApplied Physics Letters, 1975