Molecular Beam Epitaxial Growth of In0.15Ga0.85As Quantum Wells on (110) GaAs Surfaces
- 1 May 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (5R) , 2544-2547
- https://doi.org/10.1143/jjap.35.2544
Abstract
We report on molecular beam epitaxial (MBE) growth of high-quality In0.15Ga0.85As quantum wells (QWs) on (110) GaAs surfaces. The (110) surfaces are prepared by cleaving (001) GaAs substrates in air. The optimized growth condition is searched by changing the substrate temperature for the growth of In0.15Ga0.85As layers. We have found that the substrate temperature around 430°C is crucial to obtain the good surface morphology without facet structures and the sharp PL peak of an In0.15Ga0.85As QW.Keywords
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