Low Energy Electron Irradiation Induced Deep Level Defects in6H−SiC: The Implication for the Microstructure of the Deep LevelsE1/E2

$N$-type $6H\mathrm{\text{−}}\mathrm{SiC}$ samples irradiated with electrons having energies of $E_e=0.2$, $0.3$, $0.5$, and $1.7$ were studied by deep level transient technique. No deep level was detected at below 0.2 MeV irradiation energy while for $E_e\ge 0.3\mathrm{MeV}$, deep levels $ED1$, $E_1/E_2$, and $E_i$ appeared. By considering the minimum energy required to displace the C atom or the Si atom in the SiC lattice, it is concluded that generation of the deep levels $E_1/E_2$, as well as $ED1$ and $E_i$, involves the displacement of the C atom in the SiC lattice.