Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy
- 1 July 1997
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 162 (1) , 199-225
- https://doi.org/10.1002/1521-396x(199707)162:1<199::aid-pssa199>3.0.co;2-0
Abstract
No abstract availableThis publication has 33 references indexed in Scilit:
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