Magnetostatic field effect on threshold current in a GaAs/AlyGA1-yAs double-heterostructure laser
- 1 July 1981
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (7) , 4414-4417
- https://doi.org/10.1063/1.329354
Abstract
The magnetostatic field dependence of the threshold current density in a GaAs/AlyGA1‐yAs double‐heterostructure laser is investigated with the aid of the solution of the electron diffusion equation. The reduction of the threshold current density by increasing the magnetic field strength can be significant when the difference in the energy band gap of the active and inactive layers at the heterojunction is small.This publication has 12 references indexed in Scilit:
- Room-temperature threshold-current dependence of GaAs-AlxGa1−xAs double-heterostructure lasers on x and active-layer thicknessJournal of Applied Physics, 1978
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974
- How much Al in the AlGaAs–GaAs laser?Journal of Applied Physics, 1974
- Barrier determinations on Ge–AlxGa1−xAs and GaAs–AlxGa1−xAs p-n heterojunctionsApplied Physics Letters, 1973
- Composition Dependence of the Ga1−xAlxAs Direct and Indirect Energy GapsJournal of Applied Physics, 1969
- Properties of InAs LasersJournal of Applied Physics, 1966
- Infrared Transmission and Fluorescence of Doped Gallium ArsenidePhysical Review B, 1964
- INFRARED InSb LASER DIODE IN HIGH MAGNETIC FIELDSApplied Physics Letters, 1963
- MAGNETICALLY TUNABLE cw InAs DIODE MASERApplied Physics Letters, 1963
- Evidence for the Role of Donor states in GaAs ElectroluminescencePhysical Review Letters, 1963