A study of the morphology and microstructure of LPCVD polysilicon
- 1 December 1993
- journal article
- Published by Springer Nature in Journal of Materials Science
- Vol. 28 (23) , 6279-6284
- https://doi.org/10.1007/bf01352184
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Effects of Microstructure and As Doping Concentration on the Electrical Properties of LPCVD PolysiliconJournal of the Electrochemical Society, 1991
- Crystallization of Amorphous Silicon with Clean SurfacesJapanese Journal of Applied Physics, 1991
- Phosphorus Doped Polysilicon for Double Poly Structures: I . Morphology and MicrostructureJournal of the Electrochemical Society, 1991
- Structure and crystal growth of atmospheric and low-pressure chemical-vapor-deposited silicon filmsJournal of Applied Physics, 1986
- Solid-phase crystallization kinetics in dopeda-Si chemical-vapor-deposition filmsPhysical Review B, 1985
- Growth and Physical Properties of LPCVD Polycrystalline Silicon FilmsJournal of the Electrochemical Society, 1984
- Epitaxial regrowth of intrinsic, 31P-doped and compensated (31P+11B-doped) amorphous SiJournal of Applied Physics, 1982
- Structure and Properties of LPCVD Silicon FilmsJournal of the Electrochemical Society, 1980
- Grain Growth Mechanism of Heavily Phosphorus‐Implanted Polycrystalline SiliconJournal of the Electrochemical Society, 1978
- Structure and Stability of Low Pressure Chemically Vapor‐Deposited Silicon FilmsJournal of the Electrochemical Society, 1978