Native defects and dopants in gan studied through photoluminescence and optically detected magnetic resonance
- 1 April 1995
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 24 (4) , 219-223
- https://doi.org/10.1007/bf02659678
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Thermally annealed GaN nucleation layers and the device-quality metal organic chemical vapor deposition growth of Si-doped GaN films on (00.1) sapphireJournal of Applied Physics, 1994
- Native Defects and Impurities in Cubic and Wurtzite GanMRS Proceedings, 1994
- Native Defects in Wurtzite GaN And AlNMRS Proceedings, 1994
- Observation of optically detected magnetic resonance in GaN filmsApplied Physics Letters, 1993
- N vacancies in AlxGa1−xNJournal of Applied Physics, 1992
- Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1991
- Mechanism of Yellow Luminescence in GaNJapanese Journal of Applied Physics, 1980
- Optical Detection of Magnetic Resonance for an Effective-Mass-like Acceptor in-SiCPhysical Review Letters, 1980
- Absorption, Reflectance, and Luminescence of GaN Epitaxial LayersPhysical Review B, 1971
- Donor-acceptor pair recombination in GaNSolid State Communications, 1971