Defect generation sue to surface corrugation in InGaAsP/InP DFB laser structures grown by MOVPE on grating-formed InP substrates
- 31 December 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 825-831
- https://doi.org/10.1016/0022-0248(88)90626-4
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- MOVPE-grown 1.5 µm distributed feedback lasers on corrugated InP substratesIEEE Journal of Quantum Electronics, 1987
- Low-threshold operation of 1.5μm buried-heterostructure DFB lasers grown entirely by low-pressure MOVPEElectronics Letters, 1987
- InP Etchant for Submicron PatternsJournal of the Electrochemical Society, 1986
- InGaAsP/InP distributed feedback buried heterostructure lasers with both facets cleaved structureIEEE Journal of Quantum Electronics, 1986
- Low Pressure Metalorganic Vapor Phase Epitaxy of InP in a Vertical ReactorJournal of the Electrochemical Society, 1985
- Thermal deformation of surface corrugations on InGaAsP crystalsJournal of Crystal Growth, 1985
- cw operation of 1.57-μm GaxIn1−xAsyP1−yInP distributed feedback lasers grown by low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1984
- TEM studies of MOVPE (Ga,In)As interfaces with InP substratesJournal of Crystal Growth, 1984
- CW operation of DFB-BH GaInAsP/InP lasers in 1.5 μm wavelength regionElectronics Letters, 1982
- Room-temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/InP lasers emitting at 1.57 μmElectronics Letters, 1981