Gap States Distribution of Undoped a-Si: H Determined with Phase-Shift Analysis of the Modulated Photocurrent
- 1 July 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (7A) , L440
- https://doi.org/10.1143/jjap.21.l440
Abstract
In order to determine the energy distribution of localized states in the band gap of undoped hydrogenated amorphous silicon, the previously proposed method, i.e. the phase-shift analysis of the modulated photocurrent, is applied to this material. Obtained is the tail states distribution with a bump structure around 0.62 eV below the mobility edge of the conduction band.Keywords
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