Determination of the Density of State Distribution of a-Si:H by Isothermal Capacitance Transient Spectroscopy
- 1 July 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (7) , L549
- https://doi.org/10.1143/jjap.20.l549
Abstract
An ICTS (Isothermal Capacitance Transient Spectroscopy) theory for a system of continuously-distributed gap states is given and experimental data by the ICTS applied to P-doped a-Si:H Schottky barrier diode are presented. It is shown that the ICTS is a useful tool for the study of gap states of a-Si:H whose material parameters are strongly temperature-dependent.Keywords
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