High-temperature stability of Nb/GaAs and NbN/GaAs interfaces
- 11 January 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (2) , 135-137
- https://doi.org/10.1063/1.99074
Abstract
The interface stabilities of Nb/GaAs and NbN/GaAs contacts at temperatures up to 700 °C for Nb/GaAs and 850 °C for NbN/GaAs have been investigated by transmission electron microscopy and x-ray diffractometry techniques. Results reveal that a Nb/GaAs reaction takes place at temperatures above 600 °C, and interdiffusion at the NbN/GaAs interface occurs at temperatures above 800 °C. The correlation between the observed interface morphologies before and after annealing and previously reported electrical properties of these contacts is also discussed.Keywords
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