Titanium nitride Schottky-barrier contacts to GaAs
- 1 July 1983
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (1) , 87-89
- https://doi.org/10.1063/1.94131
Abstract
The electrical properties and interface chemistry of ideal titanium nitride Schottky‐barrier contacts to GaAs are investigated by using x‐ray photoemission spectroscopy (XPS), current‐voltage (I‐V), and capacitance‐voltage (C‐V) techniques. The TiN films were grown on clean n‐type GaAs (100) surfaces by reactive evaporation of Ti in a NH3 atmosphere within the XPS system. The TiN‐GaAs Schottky‐barrier height is 0.83 eV. I‐V and C‐V measurements were made for a sequence of anneal temperatures up to 700 °C; the electrical properties are nearly ideal up to 600 °C. TiN is found to be a relatively inert nonmetallic alternative Schottky‐barrier contact to GaAs that is suitable for high‐temperature applications.Keywords
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